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r07ds0338ej0500 rev.5.00 page 1 of 11 may 11, 2011 preliminary datasheet RJM0404JSC silicon n/p channel power mos fet (6 in 1 type) high speed power switching features ? for automotive applications ? aec-q101 compliant ? n/p channel mos fet (6 in 1 type). high density mounting ? low on-resistance ? capable of 4.5 v gate drive outline renesas package code: prsp0020df-a (package name: hsop-20) 14 s 19 s 11 s mos5 pch mos6 pch mos4 pch mos2 nch mos1 nch mos3 nch 12 g 17 g 10 g 7 g s 4 s 9 s 1 20 g 2 g d 8,13,23 d 5,6,15,16,22 d 3,18,21 r07ds0338ej0500 rev.5.00 may 11, 2011
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 2 of 11 may 11, 2011 pin arrangement ( t o p vie w ) 20 19 18 17 16 15 14 13 12 11 20 19 18 17 16 15 14 13 12 11 21 common header 22 common header 23 common header 1 2 3 4 5 6 7 8 9 10 1 2 3, 18 4 5, 6, 15, 16 7 8, 13 9 10 11 12 14 17 19 20 21 22 23 mos1 mos1 mos1, 6 mos2 mos2, 5 mos2 mos3, 4 mos3 mos3 mos4 mos4 mos5 mos5 mos6 mos6 mos1, 6 mos2, 5 mos3, 4 source gate drain source drain gate drain source gate source gate source gate source gate drain (header) drain (header) drain (header) no. 1 2 3 4 5 6 7 8 9 10 ( b o ttom vie w ) 14 s 19 s 11 s mos5 pch mos6 pch mos4 pch mos2 nch mos1 nch mos3 nch 12 g 17 g 10 g 7 g s 4 s 9 s 1 20 g 2 g d 8,13,23 d 5,6,15,16,22 d 3,18,21 absolute maximum ratings (ta = 25 ? c) value item symbol mos1, 2, 3 (nch) mos4, 5, 6 (pch) unit drain to source voltage v dss 40 ?40 v gate to source voltage v gss +20 / ?5 ?20 / +5 v drain current i d 20 ?20 a drain peak current i d (pulse) note1 80 ?80 a avalanche current i ap note3 20 ?20 a avalanche energy e ar note3 53 53 mj channel dissipation pch note2 54 54 w channel temperature tch note4 175 175 ?c storage temperature tstg ?55 to +150 ?55 to +150 ?c notes: 1. pw ? 10 ? s duty cycle ? 1% 2. tc = 25 ? c : 1 drive operation. 3. tch = 25 ?c, rg ? 50 ? 4. aec-q101 compliant thermal impedance characteristics ? channel to case thermal impedance ? ch-c: 2.78 ? c/w
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 3 of 11 may 11, 2011 electrical characteristics ? mos1, mos2, mos3 (n channel) (ta = 25 ? c) item symbol min typ max unit test conditions zero gate voltage drain current i dss ? ? 10 ? a v ds = 40 v, v gs = 0 gate to source leak current i gss ? ? ? 10 ? a v gs = +20 / ?5 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v v ds = 10 v, i d = 1 ma ? 17 21 m ? i d = 10 a, v gs = 10 v note5 static drain to source on state resistance r ds(on) ? 24 34 m ? i d = 10 a, v gs = 4.5 v note5 input capacitance ciss ? 1400 ? pf output capacitance coss ? 230 ? pf reverse transfer capacitance crss ? 100 ? pf v ds = 10v, v gs = 0, f = 1 mhz total gate charge qg ? 23 ? nc gate to source charge qgs ? 3 ? nc gate to drain charge qgd ? 4 ? nc v dd = 25 v, v gs = 10 v, i d = 20 a turn-on delay time t d(on) ? 15 ? ns rise time t r ? 35 ? ns turn-off delay time t d(off) ? 50 ? ns fall time t f ? 8 ? ns v gs = 10 v, i d = 10 a, v dd ? 20 v,r l = 2 ? , r g = 4.7 ? body-drain diode forward voltage v df ? 0.92 1.2 v i f = 20 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 20 ? ns i f = 20 a, v gs = 0 di f /dt = 50 a/? s note: 5. pulse test ? mos4, mos5, mos6 (p channel) (ta = 25 ? c) item symbol min typ max unit test conditions zero gate voltage drain current i dss ? ? ?10 ? a v ds = ?40 v, v gs = 0 gate to source leak current i gss ? ? ? 10 ? a v gs = ?20 / +5 v, v ds = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.5 v v ds = ?10 v, i d = ?1 ma ? 34 42 m ? i d = ?10 a, v gs = ?10 v note6 static drain to source on state resistance r ds(on) ? 48 68 m ? i d = ?10 a, v gs = ?4.5 v note6 input capacitance ciss ? 1500 ? pf output capacitance coss ? 230 ? pf reverse transfer capacitance crss ? 140 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz total gate charge qg ? 25 ? nc gate to source charge qgs ? 5 ? nc gate to drain charge qgd ? 4 ? nc v dd = ?25 v, v gs = ?10 v, i d = ?20 a turn-on delay time t d(on) ? 30 ? ns rise time t r ? 55 ? ns turn-off delay time t d(off) ? 50 ? ns fall time t f ? 20 ? ns v gs = ?10 v, i d = ?10 a, v dd ? ?20 v, r l =2 ? , r g = 4.7 ? body-drain diode forward voltage v df ? ?0.97 ?1.26 v i f = ?20 a, v gs = 0 note6 body-drain diode reverse recovery time t rr ? 30 ? ns i f = ?20 a, v gs = 0 di f /dt = 50 a/? s note: 6. pulse test
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 4 of 11 may 11, 2011 main characteristics ? mos1, 2, 3 (nch) 100 10 1 110 100 20 8 12 16 4 0468 210 10 1 0.1 0.01 0.001 0.0001 0 123 5 4 0.1 1000 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 0.1 0.01 11 0 100 10 1 drain current i d (a) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance r ds(on) (m) static drain to source state on resistance vs. drain current 100 1000 v gs = 2.7 v 4.5 v 2.8 v 10 v case temperature tc ( c) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. temperature 50 ?50 ? 25 0 25 50 75 100 125 150 175 0 20 10 40 30 50 40 30 20 10 048121620 gate to source voltage v gs (v) static drain to source on state resistance vs. gate to source voltage tc = 150c 25c ?40c v gs = 4.5 v 10 v v ds = 10 v pulse test tc = 150c 25c ?40c i d = 10 a pulse test i d = 10 a pulse test v sg = ?4.5 v ?10 v 100 s 1 ms tc = 25c 1 shot pulse 10 s dc operation pw = 10 ms operation in this area is limited r ds(on) tc = 25c pulse test tc = 25c pulse test
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 5 of 11 may 11, 2011 ? mos1, 2, 3(nch) 20 16 12 8 4 0 50 40 30 20 10 8 16243240 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0 0.4 0.8 1.2 1.6 2.0 20 15 5 10 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) d. u. t rg i ap monitor v ds monitor v dd 50 in 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform tc = 25c i d = 20 a v ds v gs v gs = 0 v, ?5 v 10 v v dd = 25 v 10 v 5 v v dd = 25 v 10 v 5 v 01020 40 30 10000 1000 100 10 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage tc = 25c v gs = 0 f = 1 mhz ciss coss crss 100 80 60 40 20 25 50 75 100 125 150 175 0 channel temperature tch ( c) repetitive avalanche energy e ar (mj) avalanche energy vs. channel temperature derating tc = 25c pulse test i ap = 20 a v dd = 25 v duty < 0.1 % rg 50
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 6 of 11 may 11, 2011 ? mos1, 2, 3 (nch) t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 10 v r l v ds = 20 v vout monitor rg
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 7 of 11 may 11, 2011 ? mos4, 5, 6 (pch) drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics drain current i d (a) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. temperature 100 80 60 40 20 0 ?4 ?8 ?12 ?16 ?20 gate to source voltage v gs (v) static drain to source on state resistance vs. gate to source voltage ?100 ?10 ?1 ?1 ?10 ?100 ?0.1 ?1000 ?0.1 ?0.01 ?20 ?12 ?16 ?8 ?4 0 ?4 ?2 ?6 ?8 ?10 ?3.0 v ?3.5 v v gs = ?2.5 v ?4.5 v ?10 v ?10 ?1 ?0.1 ?0.01 ?0.001 ?0.0001 0 ?1 ?2 ?3 ?5 ?4 ?1 ?10 100 10 1 ?100 1000 100 60 20 ?50 ? 25 0 25 50 75 100 125 150 175 0 80 40 tc = 25c pulse test tc = 150c 25c ?40c pulse test v ds = ?10 v v gs = ?4.5 v ?10 v tc = 150c 25c ?40c i d = ?10 a pulse test i d = ?10 a pulse test v gs = ?4.5 v ?10 v 100 s 1 ms tc = 25c 1 shot pulse 10 s dc operation pw = 10 ms operation in this area is limited r ds(on) tc = 25c pulse test
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 8 of 11 may 11, 2011 ? mos4, 5, 6 (pch) gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) avalanche test circuit avalanche waveform 0 ?10 ?20 ?40 ?30 10000 1000 100 10 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 0 ?4 ?8 ?12 ?16 ?20 0 0 ?10 ?20 ?30 ?40 ?50 8 16243240 0 ?0.5 ?1.0 ?1.5 ?2.0 ?20 ?5 ?15 ?10 d. u. t rg i ap monitor v ds monitor v dd 50 in ?15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd f = 1 mhz v gs = 0 ciss coss crss v gs tc = 25c i d = ?20 a v ds v dd = ?25 v ?10 v ?5 v v dd = ?25 v ?10 v ?5 v v gs = 0 v, 5 v ?10 v 100 80 60 40 20 25 50 75 100 125 150 175 0 channel temperature tch ( c) repetitive avalanche energy e ar (mj) avalanche energy vs. channel temperature derating i ap = ?20 a v dd = ?25 v duty < 0.1 % rg 50 tc = 25c pulse test
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 9 of 11 may 11, 2011 ? mos4, 5, 6 (pch) rg vin monitor d.u.t. vin ?10 v r l v dd = ?20 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 10 of 11 may 11, 2011 ? common channel dissipation pch (w) case t emperature tc ( c) power vs. temperature derating 100 80 60 40 20 0 50 100 150 200 pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) d = 1 0.5 0.2 0.1 0.05 10 100 1 m10 m 100 m1 10 1 0.1 0.01 dm p pw t d = pw t ch - c(t) = s (t) x ch - c ch - c = 2.78c/w, tc = 25c 1 drive operation 0.02 0.01 1shot pulse
RJM0404JSC preliminary r07ds0338ej0500 rev.5.00 page 11 of 11 may 11, 2011 package dimensions 14.25 10.9 13.95 1.8 0.1 1.27 14.0 14.4 0.470.40 a 1 11.1 maxnom min dimension in millimeters symbol reference 3.6 0.95 0.8 0.65 0.30 11.0 0.100.050.01 0.53 0.45 0.370.320.28 14.2 8 0 0.25 14.1 l 1 z h e y x c b p a 2 e d b 1 c 1 e e l a index mark e 1 y xm p *3 *2 *1 f 10 20 11 1.26 bottom view 8.2 7.3 7.0 0.15 2.98 2.98 1.38 1.38 12.1 d 15.9 0.1 e h z b a 1.28 3.35 terminal cross sectio n p 1 1 c b b c 1 detail f 1.71 l 0.2 a note) 1. dimensions"*1"and"*2" do not include mold flash. 2. dimension"*3"does not include trim offset. p-hsop20-11x14.1-1.27 2.0g mass[typ.] prsp0020df-a renesas code jeita package code previous code ordering information orderable part number quan tity shipping container RJM0404JSC-00-12 700 pcs tray
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